Surface passivation technology for III-V semiconductor nanoelectronicsHASEGAWA, Hideki; AKAZAWA, Masamichi.Applied surface science. 2008, Vol 255, Num 3, pp 628-632, issn 0169-4332, 5 p.Conference Paper

Beating patterns in the oscillatory magnetoresistance of an AlGaN/GaN heterostructureQIU, Z. J; GUI, Y. S; ZHENG, Z. W et al.Solid state communications. 2004, Vol 129, Num 3, pp 187-190, issn 0038-1098, 4 p.Article

Electron phase and spin decoherence in the vicinity of the second subband edge in an asymmetrical quantum wellSAVELIEV, I. G; BYKANOV, D. D; NOVIKOV, S. V et al.Journal of physics. Condensed matter (Print). 2004, Vol 16, Num 4, pp 641-650, issn 0953-8984, 10 p.Article

Structural and electronic properties of the Sn/Si(1 1 1)-(2√3 x 2√3)R30° surface revisedOTTAVIANO, L; PROFETA, G; PETACCIA, L et al.Surface science. 2004, Vol 554, Num 2-3, pp 109-118, issn 0039-6028, 10 p.Article

Study of InGaP/InGaAs double doped channel heterostructure field-effect transistors (DDCHFETs)CHUANG, Hung-Ming; CHENG, Shiou-Ying; LAI, Po-Hsien et al.Semiconductor science and technology. 2004, Vol 19, Num 1, pp 87-92, issn 0268-1242, 6 p.Article

Monte Carlo simulation of hot-phonon and degeneracy effects in the AlGaN/GaN two-dimensional electron gas channelRAMONAS, M; MATULIONIS, A; ROTA, L et al.Semiconductor science and technology. 2003, Vol 18, Num 2, pp 118-123, issn 0268-1242, 6 p.Article

Mobility of two-dimensional electrons in an AlGaN/GaN modulation-doped heterostructureGÖKDEN, Sibel.Physica status solidi. A. Applied research. 2003, Vol 200, Num 2, pp 369-377, issn 0031-8965, 9 p.Article

High-performance solar-blind photodetector using an Al_0.6Ga_0.4N n-type window layerCHOWDHURY, Uttiya; WONG, Michael M; COLLINS, Charles J et al.Journal of crystal growth. 2003, Vol 248, pp 552-555, issn 0022-0248, 4 p.Conference Paper

High pressure study of the electrical transport phenomena in AlGaN/GaN heterostructuresCONSEJO, Ch; KONCZEWICZ, L; CONTRERAS, S et al.Physica status solidi. B. Basic research. 2003, Vol 235, Num 2, pp 232-237, issn 0370-1972, 6 p.Conference Paper

The diamond-vacuum interface: I. A model of the interface between an n-type semiconductor, with negative electron affinity, and the vacuumPRINS, Johan F.Semiconductor science and technology. 2003, Vol 18, Num 3, pp S125-S130, issn 0268-1242Article

Electronic properties of III-V semiconductor heterostructuresLO, Ikai; TSAI, Jenn-Kai; TU, Li-Wei et al.III-V semiconductor heterostructures : physics and devices. 2003, pp 37-56, isbn 81-7736-170-8, 20 p.Book Chapter

The effect of anisotropy on resonant tunnelling spin polarization in type-II heterostructuresBOTHA, A. E; SINGH, M. R.Physica status solidi. B. Basic research. 2002, Vol 231, Num 2, pp 437-445, issn 0370-1972Article

Spin-injection across a magnetic-electric barrier structureJIANG, Y; JALIL, M. B. A.Solid state communications. 2002, Vol 123, Num 11, pp 501-504, issn 0038-1098, 4 p.Article

Modelling a-Si:H based p-i-n structures for optical sensor applicationsVYGRANENKO, Yu; FERNANDES, M; LOURO, P et al.Thin solid films. 2002, Vol 403-04, pp 354-358, issn 0040-6090Conference Paper

Low-temperature hopping transport over the upper Hubbard band in p-GaAs/AlGaAs structuresAGRINSKAYA, N. V; IVANOV, Yu. L; USTINOV, V. M et al.Physica status solidi. B. Basic research. 2002, Vol 230, Num 1, pp 171-175, issn 0370-1972Conference Paper

Electrical characterization and cathodoluminescence microanalysis of AlN/GaN heterostructuresHUBBARD, S. M; PAVLIDIS, D; VALIAEV, V et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 91-92, pp 336-340, issn 0921-5107Conference Paper

LO-phonon assisted hot electron transport in biased superlatticesKAST, M; PACHER, C; COQUELIN, M et al.Physica. B, Condensed matter. 2002, Vol 314, Num 1-4, pp 409-412, issn 0921-4526Conference Paper

Terahertz generation due to streaming plasma instability in n⁺-n^--n-n⁺ InN submicron structureSTARIKOV, E; GRUZINSKIS, V; SHIKTOROV, P et al.Physica status solidi. A. Applied research. 2002, Vol 190, Num 1, pp 287-293, issn 0031-8965Conference Paper

Annealing effects on the two-dimensional electron gas in strained Si/Si_1-xGe_x modulation-doped single quantum wellsKIM, J. Y; KIM, T. W.Solid state communications. 2001, Vol 117, Num 5, pp 303-306, issn 0038-1098Article

Current-voltage characteristic and Schottky barrier height of the GaAlAsSb(p)/GaSb(n⁺) heterostructureAIT KACI, H; BOUKREDIMI, D; MEBARKI, M et al.Physica status solidi. A. Applied research. 2001, Vol 183, Num 2, pp 345-351, issn 0031-8965Article

Detection of efficient carrier capture in ultrathin InAs/GaAs layers using a degenerate pump-probe techniqueLIU, Bo; LI, Q; ZHONGYING XU et al.Journal of physics. Condensed matter (Print). 2001, Vol 13, Num 18, pp 3923-3930, issn 0953-8984Article

Real-space and energy representations for the interface-roughness scattering in quantum-well structuresLYO, S. K.Journal of physics. Condensed matter (Print). 2001, Vol 13, Num 6, pp 1259-1264, issn 0953-8984Article

Temperature dependence of the breakdown voltage for reverse-biased GaN p-n-n⁺ diodesAGGARWAL, R. L; MELNGAILIS, I; VERGHESE, S et al.Solid state communications. 2001, Vol 117, Num 9, pp 549-553, issn 0038-1098Article

Electrical characterization at cubic AlN/GaN heterointerface grown by radio-frequency plasma-assisted molecular beam epitaxyKITAMURA, T; ISHIDA, Y; SHEN, X. Q et al.Physica status solidi. B. Basic research. 2001, Vol 228, Num 2, pp 599-602, issn 0370-1972Conference Paper

Magnetic-field-driven transitions of chaotic dynamics in quantum cavitiesTAKAGAKI, Y; ELHASSAN, M; SHAILOS, A et al.Physica status solidi. B. Basic research. 2001, Vol 224, Num 2, pp 471-474, issn 0370-1972Conference Paper